MOS chip RS1E320GN is suitable for L3+ hash board MOS chip replacement and repair. After the MOS chip is damaged, there is no voltage or abnormal voltage on the whole board. Usually when 0 ASIC is prompted (the number of chips reported by the fixture test is 0), first check the voltage in the voltage domain, if it is not normal, it is likely to be a MOS failure.

Features:

Low resistance;

High power package (HSOP8);

Lead-free, RoHS compliant, halogen free;

100% Rg and UIS tested;

Junction-to-ambient thermal resistance: 41.7 °C/W, thermal resistance: 3.6 °CW.

Parameters:

RDS(on) (max): 1.9mΩ

lD: ±32A

Power: 3.0W

Drain-source voltage(VDSS ): 30V

Continuous drain current: T. =25℃±80A(LD*1)T. =25℃ ±32A (LD)

Pulsed drain current: ±128A

Gate-source voltage: ±20V

Avalanche energy single pulse: 77.7mJ

Avalanche current: 32A

Power consumption: 34.6 W(PD*1) 3.0W(PD*4)

Junction temperature: 150℃

Storage temperature range: -55 to +150°C