125188.34USD
121.59USD
3.03USD
0.26USD
4571.68USD
19.88USD
1178.6USD
234.45USD
0.16USD
0.08USD
0.26USD

OSG60R030HT3Z

About this item
Price : $3.92
MOQ : 1 pcs
Weight : 0.001 KG
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Product detail
Product description:

OSG60R030HT3Z is a MOS field effect transistor using TO-247 packaging technology. It has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and a wide safe working area.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product features:

The FET is a voltage control device that controls ID (drain current) through VGS (gate-source voltage);

The current at the control input terminal of the FET is extremely small, so its input resistance (107 ~ 1012Ω) is very large.

It uses majority carriers to conduct electricity, so its temperature stability is better;

The voltage amplification factor of the amplifier circuit formed by it is smaller than the voltage amplification factor of the amplifier circuit formed by the triode;

The FET has the strong anti-radiation ability;

The noise is low since it does not have shot noise caused by the diffusion of electrons in chaotic motion.



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