SIC632 50A Integrated Power Stage SiC632 is an integrated power stage solution optimized for synchronous buck applications, delivering high current, high efficiency and high power density performance. Enabling regulator designs capable of delivering up to 50 A per phase continuous current, the SiC632 features an advanced MOSFET gate driver IC that provides industry benchmark performance with significantly reduced switching and conduction losses. Features high current drive capability, adaptive dead-time control, integrated bootstrap Schottky diode, thermal warning (THWn) warning system for high junction temperature and zero current detection to improve light-load efficiency. These drivers are also compatible with various PWM controllers and support tri-state PWM and 5V PWM logic. Available in a 5 mm * 5 mm MLP package. It is a common repair chip used to repair the power supply of crypto mining rigs such as Antminer, Innosilicon, Whatsminer, etc.

Features:

a low-side MOSFET with integrated Schottky diode

High-frequency operation up to 1.5 MHz

Power MOSFETs optimized for 19 V input stage

Zero current detect control  for light-load efficiency improvement

Low PWM propagation delay (< 20 ns)

Faster disable

Thermal monitor flag

Under voltage lockout for VCIN

Applications:

Multi-phase VRDs for computing, graphics card and memory

Up to 24 V rail input DC/DC VR modules

Intel IMVP-8 VRPower delivery： VCORE, VGRAPHICS, VSYSTEM AGENT Skylake, Kabylake platforms;  VCCGI for Apollo Lake platforms