The IPW60R037CSFD 600V Power Transistor is a revolutionary technology MOSFET for high voltage power supplies, a segment of equipment optimized to address the charging market. Low gate charge (Qg) and improved switching behavior give it the highest efficiency. Furthermore, an integrated fast body diode and greatly reduced reverse recovery charge (Qrr) results in the highest reliability of the resonant topology. In addition, IPW60R037CSFD meets efficiency and further supports high power density solutions.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product parameters:

Model code: IPW60R037CSFD

Marking code: 60R037CS

Transistor Type: MOSFET

Control channel type: N channel

Maximum power consumption (Pd): 245 W

Maximum drain-source voltage |Vds|: 600 V

Maximum gate-source voltage |Vgs|: 20 V

Maximum gate threshold voltage |Vgs(th)|: 4.5 V

Maximum drain current |Id|: 54 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 136 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 104 pF

Maximum drain-source on-resistance (Rds): 0.037 ohms

Package: TO247

Product features:

• Fast body diode

• Industry-leading reverse recovery fees (Qrr)

• cost optimization

• Excellent robustness and reliability in soft switching applications

• Maximum efficiency without the ease of use/performance trade-off

• Enables solutions that increase power density